TYPE 1: ALPHA SINTERED SIC TYPE 2: REACTION BONDED SIC TYPE 3: UNIQUE CHEMICAL PROCESSING TYPE 4: SINTERED CONTAIN GRAPHITE SILICON CARBIDE TYPE 5: POROUS SILICON CARBIDE
Purity > %98
Relative Density > %96
High Wear Resistance
High Corrosion Resistance
High Heat Resistance
High Thermal Conductivity
High Thermal Shock Resistance
Electric Discharge Proscessable Conductivity
High Thermal Shock Resistance
High Self Lubricity
SMALL FRICTION OF COEFFICIENT
GOOD SELF LUBRICITY
EXCELLENT ANTI-FRICTION PROPERTIES
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TECHNICAL PROPERTY DATA SHEET |
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TYPE 1 |
TYPE 2 |
TYPE 3 |
TYPE 4 |
TYPE 5 |
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Process |
Alpha Sintered SiC |
Reaction Bonded SiC |
Unique Chemical Processing |
Sintered Carbide Contain Graphite |
Porous Silicon Carbide |
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Content (wt%) |
SiC≥98% |
SIC-12%Si |
SiC-30%~40%C |
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Gravity |
3.12 |
3.05 |
2.3 |
>3.02 |
2.9-3.04 |
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Hardness |
Hs120 |
Hs110 |
Hs90 |
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Hv2400 |
Hv1700 |
Hv2250 |
Hv2400 |
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Bending Strength |
490 |
392 |
127 |
410 |
260 |
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Flexural Strength (Gpa) |
360 |
350 |
25 |
320 |
350 |
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Poisson’s Ratio |
0.20 |
0.20 |
0.20 |
0.21 |
0.2 |
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Fracture Toughness (MN/M) |
2.4 |
2.8 |
2.2 |
2.4 |
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Thermal Conductivity (W/m．K) |
147 |
151 |
38 |
135 |
110 |
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Thermal Expansion Coeff.(I/℃) |
3.5X10-6 |
3.1X10-6 |
3.2X10-6 |
3.4X10-6 |
3.6X10-6 |
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（RT~400℃） |
（RT~400℃） |
（RT~400℃） |
（RT~400℃） |
（RT~400℃） |
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Heat Resistance(in the air) |
1600℃ |
1400℃ |
400℃ |
1600℃ |
1600℃ |
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Thermal Shock Resistance △TMM |
200℃ |
250℃ |
400℃ |
200℃ |
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